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  • 1
    Electronic Resource
    Electronic Resource
    Formation of metallic, crystalline NiSi2 thin film on amorphous SiO2/Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4107-4109 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin metallic, oriented crystalline NiSi2 films that are suitable for additional epitaxial growth have been formed on amorphous SiO2 layers on Si substrates. The orientation of the Si substrate is maintained in the NiSi2 film as if the SiO2 is not present. This was achieved by combining the separation by implantation of oxygen process and e-beam evaporation techniques. The results are comparable with NiSi2 films formed directly on Si. This technique should, in general, be applicable to other silicides that have been epitaxially grown on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352843
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  • 2
    Electronic Resource
    Electronic Resource
    Growth of high-Tc YBa2Cu3Oy films with an off-axis sputtering configuration (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8419-8422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using an off-axis rf sputtering configuration, we have prepared in situ high-Tc YBa2Cu3O7−y (YBCO) films with a relatively large deposition rate. The sputtering gas was a mixture of Ar and O2 (7:3) and the substrates were MgO(100) and SrTiO3(100). We found that the distance from the target to the substrate, d, is a key factor in the deposition rate. By decreasing d to a value of about 1.5–2.5 cm, we obtained a deposition rate as great as 2000–2500 A(ring) per hour with an rf power of 120 W and at a total pressure 100–200 mTorr. The transport behaviors of the as-grown YBCO films under magnetic fields are reported. The activation energy derived from the resistive transition in magnetic fields is thickness dependent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353411
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  • 3
    Electronic Resource
    Electronic Resource
    Dynamic light scattering measurements of high-pressure viscosity utilizing a diamond anvil cell (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 838-844 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dynamic light scattering (DLS) is a widely used and powerful technique for studying the dynamics of fluids. We demonstrate here the first use of DLS in the diamond anvil cell. Using 91 nm polystyrene spheres suspended in methanol in the chamber of a diamond anvil cell, we show that the viscosity of the fluid can be accurately measured using this technique. Measurements up to 2.90 GPa are reported. Previous reports of DLS measurements have used large-volume pressure cells that limited the data to moderate pressures, but with the diamond anvil cell no such limitations exist. However, a significant difficulty in DLS measurements with the diamond cell comes from the small size of the pressure chamber. Not only does this lead to a weak scattered intensity, but scattering from the sample is combined with partly coherent scattering from the diamond/air and diamond/sample interfaces, thus complicating data interpretation. We show how this heterodyne component can bias the measured diffusion coefficients and then demonstrate a straightforward procedure by which this heterodyne component can be minimized. The resulting diffusion coefficients (ranging from 10−8 to 10−10 cm2 s−1), recalculated as viscosity, are found to have an average precision of 2.5% and are in excellent agreement with literature values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351756
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  • 4
    Electronic Resource
    Electronic Resource
    Structure analysis of ZnTe-ZnSe strained-layer superlattices by transmission electron microscopy observation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1606-1609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural properties of ZnTe-ZnSe strained-layer superlattices grown on GaAs(001) substrates by hot wall epitaxy were investigated by transmission electron microscopy. The satellite spots observed in transmission electron diffraction patterns confirmed the superlattice periodicity and agreed very well with the results from x-ray diffraction. Smooth and abrupt interfaces are observed in (110) cross-sectional images. Strain information obtained from the transmission electron diffraction and lattice images indicates that coherent strain has not been achieved in ZnTe-ZnSe superlattices when the layer thickness of each constituent material exceeded 13 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346639
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  • 5
    Electronic Resource
    Electronic Resource
    Examination of the multilevel diffraction model for interface roughness characterization by scanning tunneling microscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 101-106 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling microscopy (STM) has been used to investigate rough Au:Pd thin films. The Au:Pd surface is best described by the self-affine scaling model, with the roughness exponent α=0.79±0.06 and the interface width w=15.0±0.5 A(ring) measured directly from the STM images. We further show how α and w may be extracted from diffraction techniques by utilizing the multilevel diffraction theory, using the STM images as a model self-affine surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354139
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  • 6
    Electronic Resource
    Electronic Resource
    X-ray [440] diffraction of the strained-layer superlattices grown on (001) substrates (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 112-115 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction from the (110) thin edges is proposed to analyze the ZnTe-ZnSe strained-layer superlattices grown on GaAs(001) substrates. Strained lattice spacings parallel to the interfaces and the critical layer thickness of coherent growth can be determined directly by this technique. In spite of the large (7%) lattice mismatch between ZnTe and ZnSe layers, the experimental results show that the ZnTe-ZnSe superlattices have been prepared coherently by hot wall epitaxy and the critical thickness is about 10 A(ring). The strained lattice spacings determined by x-ray [440] diffraction, together with those of Raman scattering measurement, agree very well with the theoretical results. The residual strain in ZnTe/GaAs(001) was also estimated to be about 5×10−4 (biaxial tensile) by x-ray diffraction, where the main cause is found to be the difference of thermal expansion between ZnTe films and GaAs substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347101
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  • 7
    Electronic Resource
    Electronic Resource
    Band gaps, effective masses and refractive indices of PbSrSe thin films: Key properties for mid-infrared optoelectronic device applications (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 192-198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Key properties of PbSrSe thin films grown by molecular beam epitaxy have been studied for mid-infrared optoelectronic device applications. Detailed knowledge of the material parameters for the device design is required. The material parameters considered are: temperature-dependent band gaps, composition (or band gap)-dependent effective masses, and energy-dependent refractive indices. The study has been carried out by a combination of temperature-dependent photoluminescence and absorption measurements with the theoretical models on PbSrSe thin films of Sr compositions of as high as 0.276. The derived empirical equations for band gaps, effective masses, and refractive indices have been employed successfully in PbSe/Pb0.934Sr0.066Se multiple quantum well mid-infrared laser systems, for studying the band offsets and subband behavior. We have shown that the derived material parameters clearly promise of being applied to other PbSrSe thin films and PbSe/PbSrSe heterostructure systems for their optoelectronic applications. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421634
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  • 8
    Electronic Resource
    Electronic Resource
    Crystal structure and magnetic properties of the compound Nd5Co21B4 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1931-1933 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A compound Nd5Co21B4 belonging to the series Rm+nCo5m+3nB2n with m=3, n=2 has been synthesized by melt spinning. The crystal structure and magnetic properties of the compound have been studied by means of x-ray diffraction and magnetic measurements. The compound crystallizes in a hexagonal structure with space group P6/mmm. The Curie temperature, the saturation moment, and the planar anisotropy field of the compound are 570 K, 31.1 μB/f.u., and 861 kOe, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389082
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  • 9
    Electronic Resource
    Electronic Resource
    Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3725-3729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optoelectronic properties of undoped ZnSe/ZnMgSSe multiple quantum wells (MQWs) grown by molecular beam epitaxy on (001) GaAs substrates have been investigated by photoluminescence, photoconductivity, and persistent photoconductivity (PPC) measurements. The features related to the band-to-band excitonic and impurity-related transitions of ZnSe/ZnMgSSe MQWs are observed and discussed. In addition, the parameters that describe the temperature dependence of the interband transition energy and broadening function of the excitonic feature are evaluated. PPC has been observed in undoped ZnSe/ZnMgSSe MQWs. The decay kinetics of the PPC effect can be described by a stretched-exponential function, Ippc(t)=Ippc(0)exp[−(t/τ)β], (0〈β〈1). Through the study of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different ZnSe well width, we identify that the carrier excitation from the defect level in ZnMgSSe barrier layer into the ZnSe well layer is the origin of the PPC effect in ZnSe/ZnMgSSe MQWs. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350416
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  • 10
    Electronic Resource
    Electronic Resource
    Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3762-3764 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strains in cubic GaN films grown on GaAs (001) were measured by a triple-axis x-ray diffraction method. Residual strains in the as-grown epitaxial films were in compression, contrary to the predicted tensile strains caused by large lattice mismatch between epilayers and GaAs substrates (20%). It was also found that the relief of strains in the GaN films has a complicated dependence on the growth conditions. We interpreted this as the interaction between the lattice mismatch and thermal mismatch stresses. The fully relaxed lattice constants of cubic GaN are determined to be 4.5038±0.0009 Å, which is in excellent agreement with the theoretical prediction of 4.503 Å. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1288779
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