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  • 1
    Electronic Resource
    Electronic Resource
    Determination of the hole-phonon coupling constant of germanium by cyclotron resonance
    Amsterdam : Elsevier
    Physics Letters A 27 (1968), S. 597-598 
    Details
    ISSN: 0375-9601
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9601(68)90070-4
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  • 2
    Electronic Resource
    Electronic Resource
    High quality ZnTe-ZnSe strained-layer superlattice with buffer layer prepared by hot wall epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 239-241 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality ZnTe-ZnSe strained-layer superlattices grown on GaAs (001) substrates have been obtained by the hot wall epitaxy technique through introducing ZnTe and ZnSe buffers. Raman scattering from folded longitudinal acoustic phonons was observed. High-angle satellite reflection peaks due to Cu Kα1 and Kα2 radiations were clearly resolved in the x-ray diffraction patterns, and these patterns can be almost interpreted by a simple step model. The effect of the buffer layer on the strain of the superlattice is evaluated from the results of Raman scattering and x-ray diffraction measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101000
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  • 3
    Electronic Resource
    Electronic Resource
    Pb1−xSrxS/PbS double-heterostructure lasers prepared by hot-wall expitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 430-431 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb1−xSrxS/PbS double-heterostructure stripe contact lasers were prepared for the first time using a hot-wall expitaxy technique. The laser operated up to 245 K pulsed (2.97 μm) and 174 K cw, which are the highest operating temperatures ever reported for any semiconductor diode lasers operating around 3 μm. In this letter preparation and properties of the Pb1−xSrxS lasers are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101887
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of epitaxial ferromagnetic MnSb layers by hot-wall epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2190-2192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ferromagnetic MnSb layers were grown on GaAs(100) substrates by hot-wall epitaxy. Structural and magnetic properties of the MnSb layers are examined by reflection high-energy electron diffraction and vibrating sample magnetometry, respectively. It is found that MnSb with a NiAs-type crystalline structure can be grown epitaxially on GaAs(100) with inclination of the c axis of MnSb towards GaAs[011] and [011] direction by 53°. This inclination growth causes in-plane anisotropy of the magnetic property of the layer. The simple growth technique of the ferromagnetic layers on compound semiconductor substrates indicates high potentiality of development in magnetic material—III-V semiconductor hybrid devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358798
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  • 5
    Electronic Resource
    Electronic Resource
    PbSrS lasers prepared by hot wall epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 619-620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PbSrS/PbS double-heterostructure and multiple quantum well lasers were prepared by hot wall epitaxy, and the dependence of the properties on the cladding layer band gap and active layer thickness was investigated. Output photon energy of the double-heterostructure laser shifted to the high energy side owing to the strain between PbSrS cladding and the PbS active layers. The shift decreased by increasing the PbS active layer thickness. It was estimated that the lattice mismatch between cladding and the active layers is accommodated by the strain when the PbS active layer thickness is as thin as 0.5 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355796
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  • 6
    Electronic Resource
    Electronic Resource
    Pb1−xEuxS films prepared by hot wall epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 274-275 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb1−x EuxS films were prepared for the first time using hot wall epitaxy technique. X-ray diffraction and optical transmission measurements were performed for the films. Films with energy gaps up to 0.9 eV (up to x=0.2) were obtained. Lattice constants of the films were very close to that of PbS as is expected from the small lattice mismatch between PbS and EuS. It was found that the energy band gap increases very rapidly with the EuS content up to x=0.05 (dEg/dx=5 eV).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100592
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  • 7
    Electronic Resource
    Electronic Resource
    Raman scattering of interface modes in ZnTe–CdSe superlattices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5946-5950 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectra have been measured for ZnTe/CdSe superlattices grown by hot wall epitaxy. A mechanical vibrational interface phonon (MVIF) mode localized at the Zn–Se interface is distinctly observed in addition to quasiconfined longitudinal optic (LO) modes. The relative intensity of the MVIF mode is increased as the period of the superlattice becomes short. Raman spectral profiles calculated by use of a linear chain model and a bond polarizability model explain this behavior qualitatively. The quasiconfined LO modes show resonant enhancement for excitations at the band gap energies of ZnTe and CdSe. The effect of atomic diffusion on the interfacial structure has been examined in thermally annealed superlattices by Raman measurement. It is shown that Raman scattering of the interface mode provides information about the interdiffusion of atoms and the sharpness of the heterointerfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363566
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  • 8
    Electronic Resource
    Electronic Resource
    Structure analysis of ZnTe-ZnSe strained-layer superlattices by transmission electron microscopy observation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1606-1609 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural properties of ZnTe-ZnSe strained-layer superlattices grown on GaAs(001) substrates by hot wall epitaxy were investigated by transmission electron microscopy. The satellite spots observed in transmission electron diffraction patterns confirmed the superlattice periodicity and agreed very well with the results from x-ray diffraction. Smooth and abrupt interfaces are observed in (110) cross-sectional images. Strain information obtained from the transmission electron diffraction and lattice images indicates that coherent strain has not been achieved in ZnTe-ZnSe superlattices when the layer thickness of each constituent material exceeded 13 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346639
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  • 9
    Electronic Resource
    Electronic Resource
    Growth of CdTe(111)B homoepitaxial layers by hot-wall epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6472-6477 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe layers were grown on oriented CdTe(111)B substrates by hot-wall epitaxy. The crystallinity of the layers was examined by etch-pit observation, x-ray rocking curves, and photoluminescence spectra. High-quality CdTe(111)B homoepitaxial layers without twinned domains are obtained. It is found that the CdTe(111)B homoepitaxial layers are strained. The crystallinity and amount of strain of the layers depend on the preheating temperature of substrates before the growth. For comparison, CdTe(100) homoepitaxial layers were grown and characterized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348853
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  • 10
    Electronic Resource
    Electronic Resource
    Strain relaxation of CdTe(100) layers grown by hot-wall epitaxy on GaAs(100) substrates (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6860-6864 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain relaxation of CdTe(100) layers grown on GaAs(100) substrates by hot-wall epitaxy was investigated by measurement of optical properties, x-ray analysis, and transmission electron microscopy. It is considered from transmission electron microscopy observation that relaxation of most of the strain due to lattice mismatch occurred at the interface. However, a small amount of strain, of the order of 10−3, remained in layers thicker than 0.7 μm, and it was relaxed as the layer thickness increased. The residual strain of 4×10−4, which exists in layers thicker than 10 μm, was due to the difference between the thermal expansion coefficients of the layer and the substrate. Moreover, for layers thicker than 17 μm, split ground (n=1) and first excited (n=2) free-exciton states due to internal strain have for the first time been observed by photoluminescence and reflectance spectroscopy. The results show that CdTe layers with excellent crystallinity and homogeneity in strain are obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346079
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