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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4592-4597 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: CdTe (111)B layers were grown on oriented and misoriented GaAs (100) substrates by hot-wall epitaxy. The crystallinity of the layers was examined by x-ray diffraction. The strain relaxation was investigated by x-ray diffraction and optical reflectance spectra. (1) For the layers on oriented substrates, it is found that the strain of the layer is relaxed as the layer thickness increases, but additional strain, which is probably due to the formation of twinned domains, remains and is hardly relaxed. (2) Layers on misoriented substrates are twin free with good crystalline quality. Strain is relaxed as the layer thickness increases. The residual strain of layers thicker than 10 μm is for the most part due to the difference of thermal expansion coefficients between CdTe and GaAs.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1606-1609 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Structural properties of ZnTe-ZnSe strained-layer superlattices grown on GaAs(001) substrates by hot wall epitaxy were investigated by transmission electron microscopy. The satellite spots observed in transmission electron diffraction patterns confirmed the superlattice periodicity and agreed very well with the results from x-ray diffraction. Smooth and abrupt interfaces are observed in (110) cross-sectional images. Strain information obtained from the transmission electron diffraction and lattice images indicates that coherent strain has not been achieved in ZnTe-ZnSe superlattices when the layer thickness of each constituent material exceeded 13 A(ring).
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6472-6477 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: CdTe layers were grown on oriented CdTe(111)B substrates by hot-wall epitaxy. The crystallinity of the layers was examined by etch-pit observation, x-ray rocking curves, and photoluminescence spectra. High-quality CdTe(111)B homoepitaxial layers without twinned domains are obtained. It is found that the CdTe(111)B homoepitaxial layers are strained. The crystallinity and amount of strain of the layers depend on the preheating temperature of substrates before the growth. For comparison, CdTe(100) homoepitaxial layers were grown and characterized.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 112-115 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: X-ray diffraction from the (110) thin edges is proposed to analyze the ZnTe-ZnSe strained-layer superlattices grown on GaAs(001) substrates. Strained lattice spacings parallel to the interfaces and the critical layer thickness of coherent growth can be determined directly by this technique. In spite of the large (7%) lattice mismatch between ZnTe and ZnSe layers, the experimental results show that the ZnTe-ZnSe superlattices have been prepared coherently by hot wall epitaxy and the critical thickness is about 10 A(ring). The strained lattice spacings determined by x-ray [440] diffraction, together with those of Raman scattering measurement, agree very well with the theoretical results. The residual strain in ZnTe/GaAs(001) was also estimated to be about 5×10−4 (biaxial tensile) by x-ray diffraction, where the main cause is found to be the difference of thermal expansion between ZnTe films and GaAs substrates.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1296-1299 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A new and stable scanning tunneling microscope (STM) system has been constructed for the investigation of thin organic films in air. The STM unit is made of Macor, which is machinable ceramic and has a small thermal expansion coefficient and a high mechanical stiffness. Three-dimensional coarse position adjustment (within 3 μm) is carried out using five stacked piezoelectric transducers (PZTs). A cross-type configuration is used to prevent the thermal effect of the x- and y-direction displacement mechanism. In order to achieve high resolution, x-, y-, and z-direction displacements are performed using a tube-type PZT. The z direction of the tube PZT has a high mechanical resonant frequency of 24.4 kHz. Therefore, this STM unit is mechanically rigid, and allows stable operation under mechanical disturbances (sound and mechanical vibration). Moreover, this STM unit can be controlled for 24 h or longer by using an ordinary operational amplifier, because thermal effects are compensated. The STM system can also be used to obtain information on the spatially resolved local tunneling barrier height, which is sensitive to the chemical structure of the sample. The capabilities of this newly designed STM are demonstrated with experiments investigating the morphology and tunneling barrier height of stearic acid thin films on indium-tin-oxide substrates. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2190-2192 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial ferromagnetic MnSb layers were grown on GaAs(100) substrates by hot-wall epitaxy. Structural and magnetic properties of the MnSb layers are examined by reflection high-energy electron diffraction and vibrating sample magnetometry, respectively. It is found that MnSb with a NiAs-type crystalline structure can be grown epitaxially on GaAs(100) with inclination of the c axis of MnSb towards GaAs[011] and [011] direction by 53°. This inclination growth causes in-plane anisotropy of the magnetic property of the layer. The simple growth technique of the ferromagnetic layers on compound semiconductor substrates indicates high potentiality of development in magnetic material—III-V semiconductor hybrid devices. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5946-5950 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Raman spectra have been measured for ZnTe/CdSe superlattices grown by hot wall epitaxy. A mechanical vibrational interface phonon (MVIF) mode localized at the Zn–Se interface is distinctly observed in addition to quasiconfined longitudinal optic (LO) modes. The relative intensity of the MVIF mode is increased as the period of the superlattice becomes short. Raman spectral profiles calculated by use of a linear chain model and a bond polarizability model explain this behavior qualitatively. The quasiconfined LO modes show resonant enhancement for excitations at the band gap energies of ZnTe and CdSe. The effect of atomic diffusion on the interfacial structure has been examined in thermally annealed superlattices by Raman measurement. It is shown that Raman scattering of the interface mode provides information about the interdiffusion of atoms and the sharpness of the heterointerfaces. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 239-241 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High quality ZnTe-ZnSe strained-layer superlattices grown on GaAs (001) substrates have been obtained by the hot wall epitaxy technique through introducing ZnTe and ZnSe buffers. Raman scattering from folded longitudinal acoustic phonons was observed. High-angle satellite reflection peaks due to Cu Kα1 and Kα2 radiations were clearly resolved in the x-ray diffraction patterns, and these patterns can be almost interpreted by a simple step model. The effect of the buffer layer on the strain of the superlattice is evaluated from the results of Raman scattering and x-ray diffraction measurements.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 274-275 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Pb1−x EuxS films were prepared for the first time using hot wall epitaxy technique. X-ray diffraction and optical transmission measurements were performed for the films. Films with energy gaps up to 0.9 eV (up to x=0.2) were obtained. Lattice constants of the films were very close to that of PbS as is expected from the small lattice mismatch between PbS and EuS. It was found that the energy band gap increases very rapidly with the EuS content up to x=0.05 (dEg/dx=5 eV).
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2114-2116 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Transmission spectra of ZnTe-ZnSe strained-layer superlattices grown on GaAs (001) have been measured for the first time and step-like optical-absorption spectra between conduction and valence subbands have been observed. The GaAs substrates with a narrower band gap than the superlattices were partially removed by a chemical etching method. For the ZnTe-ZnSe superlattices with a type II band structure, the transmission spectra provide a powerful tool for determining the effective band gap and band offset, because the spatial indirect transition of separately confined electrons and holes is very weak and therefore difficult to observe in photoluminescence measurements. The absorption thresholds observed in the transmission spectra agree very well with the exciton emissions that appeared in photoluminescence data.
    Materialart: Digitale Medien
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