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Digitale Medien

Effects of growth temperature on GaN nucleation layers (1999)

Yi, M. S. ; Lee, H. H. ; Kim, D. J. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 2187-2189

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The effects of growth temperature on the microscopic structure of GaN nucleation layers were studied in a synchrotron x-ray scattering experiment. As the growth temperature increases from 467 to 655 °C, the stacking of GaN changes from random stacking to a mixture of cubic and hexagonal stacking. With increasing the growth temperature, the order in the atomic layer positions in the out-of-plane direction increases and the mosaic distribution becomes narrow. The optimal photoluminescence spectrum was obtained on the GaN epilayer deposited on the nucleation layer grown at 505 °C. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.124959

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