ISSN:
1572-817X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Chemically assisted ion beam etching (CAIBE) involving an Ar ion beam and a halogen ambient gas (Cl2, IBr3) has been used to etch high-quality laser facets for InGaAsP/InP bulk lasers (1.55 μm). We achieved eich rates of 40.0–75.0 nm min−1 at substrate temperatures between-5 and +10°C. These low temperatures have allowed us to utilize UV-baked photoresists as well as PMMA as etch masks, facilitating very simple process development. Higher substrate temperatures (50 to 120°C) yield still higher etch rates, but at the expense of severely degraded surface morphologies. Angle resolved x-ray photoelectron spectroscopy (XPS) was investigated for observing etched InP surfaces. A disproportioned surface has been detected after etching in the higher temperature range; low temperatures yield stoichiometric surfaces.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00943621
