ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Magnetotransport and the electron channel parameters are investigated in p-GaInAsSb/p-InAs heterojunctions as functions of the acceptor doping level of the quaternary (GaInAsSb) layer. An abrupt decrease in the carrier mobility with increased doping level in these heterojunctions is observed. This decrease can be attributed to the narrowing and depletion of the channel near the interface and strong localization of electrons in potential wells at the interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187343