ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The possibility of using liquid-phase epitaxy to obtain Ga1−x InxAsySb1−y solid solutions isoperiodic with GaSb near the miscibility boundary is investigated. The effect of crystallographic orientation of the substrate on the composition of the solid solutions grown in this way is examined, and the indium concentration is observed to grow from 0.215 to 0.238 in the Ga1−x InxAsySb1−y solid phase in the series of substrate orientations (100), (111)A, (111)B. A change in the composition of the solid solution leads to a shift of the long-wavelength edge of the spectral distribution of the photosensitivity. The use of a GaSb (111)B substrate made it possible, without lowering the epitaxy temperature, to increase the indium content in the solid phase to 23.8% and to create long-wavelength photodiodes with spectral photosensitivity threshold λ th=2.55 µm. The primary characteristics of such photodiodes are described, along with aspects of their fabrication. The proposed fabrication technique shows potential for building optoelectronic devices (lasers, LED’s, photodiodes) based on Ga1−x InxAsySb1−y solid solutions with red boundary as high as 2.7 µm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187673
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