ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract New possibilities of scanning electron microscopy, using secondary-and reflected-electron signals, for determining the position of heteroboundaries in long-wavelength laser structures are reported. The formation of the indicated signals in structures of mid-infrared-range lasers of a new type based on type-II GaInAsSb/InGaAsSb heterostructures as well as in the conventional InAsSb/InAsSbP heterostructures is analyzed. The observed characteristic features of the formation of secondary-and reflected-electron signals in these structures as compared with the well-studied AlGaAs/GaAs structures are explained. The results obtained are necessary for accurate determination of an important laser parameter — the position of the p-n junction. It is shown that it is best to use the reflected-electron signal.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187581
