ISSN:
1090-6533
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract An investigation is carried out on the properties of the electron channel in a broken-gap isotypic type II GaInAsSb/p-InAs heterostructure and their dependence on the doping level of the quaternary solid solution with a donor (Te) and an acceptor (Zn). The Hall mobility decreases (by more than two orders of magnitude) with increasing acceptor concentration. The Shubnikov-de Haas oscillations are observed at low temperatures (T=1.5–20 K) and the electron effective mass is determined (m n=0.026m 0), along with some other parameters of the heterostructure.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1261586