ISSN:
1432-1181
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Numerical analysis of global heat transfer with coupled thermal radiation and heat conduction is investigated in Czochralski silicon crystal growth furnace with curved diffuse and specular surfaces. The finite element method and the radiation element method are adopted to solve the global heat transfer and the radiative heat exchange, respectively. The emphasis focuses on the discussion of the influence of silicon surface radiative characteristics, i.e., either diffuse or specular, on the global heat transfer and the crystal growth process. When the specular character of the silicon crystal and melt surfaces is considered, it is found that the temperature of the melt is obviously decreased and the crystal pulling rate is enhanced.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s002310050312
