ISSN:
1432-0630
Keywords:
PACS: 71.55.-i; 73.50.-h; 78.55.Ap
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. Ultrasonic vibrations introduced into semiconductor thin-films can trigger defect reactions, which are beneficial for electronic materials and devices. This type of semiconductor processing is assigned as ultrasound treatment (UST). The UST technology was initially developed in compound semiconductors and recently successfully applied to Si-based materials. The analysis of UST effects is performed within a general scenario of three-step point-defect gettering comprised of the (a) release, (b) diffusion, and (c) capture of the defects. As a demonstrating vehicle of UST mechanisms, the experimental data on ultrasonically enhanced diffusion of atomic hydrogen in thin polycrystalline Si films are discussed. UST applied to plasma-hydrogenated films improves the homogeneity of recombination and transport properties. Ultrasound promotes a passivation of grain boundary defects as revealed using scanning photoluminescence spectroscopy, contact potential difference with nano-scale resolution, and sheet resistance measurements. The results favor a model of trap-limited hydrogen diffusion facilitated by ultrasound. Illustrative examples of the UST application for electronic devices are presented.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050994
