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Dosage modeling for deep x-ray lithography application (1998)

Shih, W.-P. ; Hwang, G.-J. ; Shew, B.-Y. ; [et al.]

Springer

Microsystem technologies 4 (1998), S. 82-85

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ISSN: 1432-1858

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology , Technology

Notes: Abstract A analytical dosage model was established to study exposure parameters of deep x-ray lithography systematically. It provided a reasonable guild line for deciding exposure parameters, selecting masks and filters in radiating process. Calculated results showed a good agreement with experiment results. Both of the single and multiple exposure processes were investigated in present study.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/s005420050101

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