ISSN:
1432-1858
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Technology
Notes:
Abstract The precision of transferred patterns are highly dependent on the quality of the mask in deep x-ray lithography. Many parameters, such as the critical energy of the synchrotron light, beamline optics and even the microstructure to be exposed should be considered in mask design. In this paper, the design rules and the boundary conditions for deep x-ray mask are discussed in general. The method of making a precision, multilayer mask using UV lithography technique is also described.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s005420050097
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