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Boron penetration studies from p+ polycrystalline Si through HfSixOy (2002)

Quevedo-Lopez, M. A. ; El-Bouanani, M. ; Kim, M. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 81 (2002), S. 1074-1076

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We present detailed B penetration studies from B-doped polysilicon through alternate gate dielectric candidate HfSixOy films. No detectible B penetration is observed for annealing times as long as 20 s after 950 °C. Considerable B incorporation into the Si substrate is observed for annealing temperatures higher than 950 °C. By modeling the B depth profiles, we calculated the B diffusivities through HfSixOy to be higher than the corresponding diffusivities for SiO2. B diffusion through grain boundaries after HfSixOy crystallization is proposed to be responsible for the enhanced B diffusivity observed. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1498872

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