ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Boron marker-layer structures have been used to analyze the heating ramp-rate dependence of transient enhanced dopant diffusion (TED) during rapid thermal annealing of Si implantation damage. The study uses short anneals with heating ramp rates in the range 0.1–350 °C/s, and peak temperatures in the range 900–1100 °C. Increasing the ramp rate is found to reduce the amount of profile broadening caused by TED, as well as reducing the smaller amount of normal "thermal-equilibrium" diffusion which is related to thermal budget. The results show why high ramp rates lead to improved B-implant activation and junction-depth control in Si devices. An Ostwald ripening model of interstitial-cluster evolution describes the detailed trends in the data and predicts further improvements in the case of ultrarapid annealing. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1347397
