ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Low temperature synthesis and electrical properties of epitaxial Sr0.8Bi2.2Ta2O9 thin films (2001)

Chattopadhyay, Soma ; Kvit, A. ; Kumar, D. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 78 (2001), S. 3514-3516

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: High quality epitaxial thin films of Sr0.8Bi2.2Ta2O9 (SBT) were grown on LaNiO3 (LNO) bottom electrodes. The SBT/LNO heterostructure was fabricated on (001) oriented LaAlO3 substrates by pulsed laser ablation. X-ray diffraction and high resolution transmission electron microscopy revealed epitaxial growth of SBT and LNO layers along the (001) direction and sharp interfaces between the epilayers. The SBT films exhibited a dielectric constant of ∼270 and the loss tangent varied from 0.02 to 0.04. The dielectric constant measured as a function of bias field revealed that the films were not ferroelectric in nature. The room temperature frequency response of the dielectric constant was observed to obey Curie–von Schweidler power law with an exponent of 0.02 in the range of 10 kHz–1 MHz. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1374226

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit