Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 678-680
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Orthorhombic epitaxial Sr2CeO4 thin-film phosphors were grown on (100) SrTiO3 and yttria-stabilized-zirconia (YSZ) single crystal substrates with epitaxial relationships of (100) [010]Sr2CeO4//(100)[010]SrTiO3 and (100)[010]Sr2CeO4//(100)[011]YSZ, respectively. As-deposited films exhibit a broadband photoluminescence (PL) emission, peaking at about 477–481 nm with a maximum cathodoluminescence (CL) intensity at about 465 nm. Enhanced PL intensity was observed for the films deposited on (100) YSZ and SrTiO3 substrates as compared to deposits on c-plane sapphire substrates, correlating with improved intragranular crystallinity and reducing defects via epitaxy. Postannealing in air significantly enhanced both of the PL and CL intensities. Luminous efficiency of 0.14 lm/W at 1 kV and 22 μA/cm2 was observed for a 2-μm-thick film annealed at 1000 °C in air. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.127083
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