Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 3989-3991
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have fabricated spin-polarized light-emitting diode structures via epitaxial regrowth of Zn1−xMnxSe on air-exposed surfaces of AlyGa1−yAs/GaAs quantum wells. No passivation procedures were used to protect or prepare the III–V surface. The electroluminescence is strongly circularly polarized due to the electrical injection of spin-polarized electrons from the ZnMnSe contact into the GaAs quantum well. An analysis of the optical polarization yields a lower bound of 65% for the spin injection efficiency. These results demonstrate the robustness of the spin injection process in the diffusive transport regime, and attest to the practicality of manufacturing semiconductor-based spin injection devices. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1332826
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
