Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 795-797
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well laser diodes have been grown by solid-source molecular-beam epitaxy using Sb as a surfactant. A low threshold of 1.1 kA/cm2 was achieved for broad-area laser diodes under pulsed operation at room temperature. High-temperature device characterization revealed characteristic temperatures (T0) of 92 and 54 K for operating temperatures below and above 75 °C, respectively, as well as a lasing-wavelength temperature dependence of 0.36 nm/ °C. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125587
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