Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Far-field characteristics of mid-infrared angled-grating distributed feedback lasers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6997-7005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The far-field emission characteristics of mid-infrared angled-grating distributed-feedback (α-DFB) lasers with W active regions are calculated using a self-consistent beam-propagation formalism that is more general than previous analyses. The theoretical projections are compared with the results of an experimental study of optically pumped α-DFB devices. Near-diffraction-limited beam quality is obtained both theoretically and experimentally for pump stripes ≤50 μm wide. While simulations employing the theoretical linewidth enhancement factor of 1.7 for the homogeneously-broadened W-laser gain spectrum predict that the good beam quality should be retained for stripes as wide as (approximate)200 μm, the data indicate a much more rapid degradation. That finding can be reproduced only by assuming that inhomogeneous broadening increases the structure's linewidth enhancement factor to (approximate)5. The experiments and theory also yield a steering of the output beam to off-normal angles as large as 6° when temperature tuning shifts the gain peak away from the grating resonance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326858
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1740-1742 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of surface polarity on the growth of Mg-doped GaN thin films on c-plane sapphire substrates by molecular-beam epitaxy has been investigated. The doping behavior of Mg and resulting conductivity of the doped layers were found to strongly depend on the surface polarity of the growing GaN planes. The samples grown on the Ga-polar face (A face) exhibited a p-type conductivity with a free-hole concentration up to 5×1017 cm−3, while the samples grown on the N-polar face (B face) were highly resistive or semi-insulating. The incorporation of residual impurities (O, Si, and C) in the two different polar surfaces was studied by secondary ion mass spectrometry analysis and its effect on the Mg doping was discussed. Our results suggest that the A face (Ga face) is the favored surface polarity for achieving p-type conductivity during the growth of Mg-doped GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126152
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 178-180 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAsN:Sb/GaAs quantum wells (QWs) were grown by solid-source molecular beam epitaxy using a N2 radio-frequency plasma source. Photoluminescence reveals an enhancement in the optical properties of InGaAsN/GaAs QWs by the introduction of Sb flux during growth. X-ray diffraction and reflection high-energy electron diffraction analyses indicate that Sb acts as a surfactant. This technique was used to improve the performance of long-wavelength InGaAsN laser diodes. A low-threshold current density of 520 A/cm2 was achieved for an InGaAsN:Sb/GaAs single quantum well 1.2 μm laser diode at room temperature under pulsed operation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124311
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    HgCdTe photodetectors with negative luminescent efficiencies 〉80% (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3082-3084 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized the negative luminescent properties of photovoltaic HgCdTe detector structures with a room-temperature cutoff of 4.2 μm. Using an optical modulation method to directly measure the emittance as a function of applied bias and temperature, the blackbody signal at 295 K is found to be suppressed by a factor of 5.6. The negative luminescence efficiency of 82% and the apparent blackbody temperature change of (approximate)−35 K are nearly independent of heatsink temperature over the range 265–305 K. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370539
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 795-797 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well laser diodes have been grown by solid-source molecular-beam epitaxy using Sb as a surfactant. A low threshold of 1.1 kA/cm2 was achieved for broad-area laser diodes under pulsed operation at room temperature. High-temperature device characterization revealed characteristic temperatures (T0) of 92 and 54 K for operating temperatures below and above 75 °C, respectively, as well as a lasing-wavelength temperature dependence of 0.36 nm/ °C. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125587
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...