Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 70-72
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The interface structure of bonded Si(001) wafers with twist angle 6.5 ° is studied as a function of annealing temperature. An ordered structure is observed in x-ray diffraction by monitoring a satellite reflection due to the periodic modulation near the interface, which results from the formation of a regular array of screw dislocations. This satellite reflection first appears at an annealing temperature of 800 °C, and increases abruptly up to temperatures of 1000 °C. We propose that this transition occurs when there is sufficient mobility for the reorganization of atomic steps and terraces in the interface region. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125659
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