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Digitale Medien

Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0≤x≤1.0 films (1999)

Kwo, J. ; Murphy, D. W. ; Hong, M. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 1116-1118

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The Ga2O3(Gd2O3) dielectric film was previously discovered to passivate the GaAs surface effectively. We have investigated the systematic dependence of the dielectric properties of (Ga2O3)1−x(Gd2O3)x on the Gd (x) content. Our results show that pure Ga2O3 does not passivate GaAs. Films with x≥14% are electrically insulating with low leakage current and high electrical breakdown strength. Furthermore, a low interfacial density of states was attained in films with x≥14%. The results show the important role of Gd2O3 in the (Ga2O3)1−x(Gd2O3)x dielectric films for effective passivation of GaAs. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.124614

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