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The role of oxygen on the stability of gettering of metals to cavities in silicon (1999)

Williams, J. S. ; Conway, M. J. ; Wong-Leung, J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 2424-2426

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The effect of oxygen implanted into epitaxial Si layers on the ability to getter Au to nanocavities, previously formed by H implantation and annealing, has been studied by Rutherford backscattering, transmission electron microscopy, and secondary ion mass spectrometry. We demonstrate that oxygen is gettered to cavities during extended annealing at 950 °C. Furthermore, the arrival of oxygen at cavities is not only shown to inhibit subsequent attempts to getter Au to cavities, but also to eject chemisorbed Au from the cavity walls. Similar behavior is observed in Czochralski Si, where the source of oxygen is within the Si itself. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.125035

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