Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 1095-1097
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The dark current as a function of temperature and infrared absorption of the p-doped In0.15Ga0.85As/Al0.45Ga0.55As multiple quantum well structures grown by molecular beam epitaxy are investigated. The dark current Id of the structure is found to be basically symmetrical over a voltage range from −10 to +10 V. It is about 10−9 A at a bias of 1 V at 80 K, more than two orders of magnitude lower than that reported for p-doped GaAs/AlGaAs QW structures with the same size. It is also found that Id is proportional to T exp[−(EC–EF)/kT] at 70 K and above while at temperatures below 30 K it does not change significantly. The EC–EF decreases with the increase in bias in an exponential form, due likely to energy bandgap bending. A strong infrared absorption peaked at a wavelength of 10.7 μm is in excellent agreement with the estimated value of 10.4 μm. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122095
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