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  • 1
    Electronic Resource
    Electronic Resource
    A proposed intermittency measurement method for transitional boundary layer flows (1995)
    Springer
    Experiments in fluids 19 (1995), S. 426-428 
    Details
    ISSN: 1432-1114
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A new turbulent intermittency detector method, based on the Turbulent Energy Recognition Algorithm (TERA), has been proposed. Its performance was compared with two other available methods using the data obtained from hot-wire measurements in a developing boundary layer flow on a concave surface with constant radius of curvature of 2 m. Comparisons show that this new method is better than the other two as a turbulent detector under the same flow conditions, especially in the near-wall and in the outer and outside regions of the boundary layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00190260
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  • 2
    Electronic Resource
    Electronic Resource
    Helicity amplitudes for multiple bremsstrahlung in massless non-abelian gauge theories
    Amsterdam : Elsevier
    Nuclear Physics, Section B 291 (1987), S. 392-428 
    Details
    ISSN: 0550-3213
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0550-3213(87)90479-2
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  • 3
    Electronic Resource
    Electronic Resource
    Uniform J-shifting approach for calculating reaction rate constant (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 7622-7626 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: This paper presents a new uniform J-shifting approach for accurate calculation of rate constant in quantum dynamics study of chemical reaction. Instead of using a fixed shifting constant B in the standard J-shifting approach, the current method employs a temperature-dependent shifting constant which is obtained through an optimization procedure at a given temperature. By utilizing the calculated reaction probabilities at only a few total angular momentum values of J, the current approach automatically gives uniformly accurate rate constant across the entire range of temperature. Numerical studies of several benchmark reaction systems, including the H+H2, H2+OH and H2+CN reactions, show explicitly that the uniform J-shifting approach is far superior to the standard J-shifting approach and it provides a robust method for accurate and efficient calculation of reaction rate constant in rigorous quantum dynamics study of chemical reaction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.478802
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of strained InxGa1−xAs-Al0.28Ga0.72As heterostructures grown by molecular-beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 246-250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence measurements were carried out on pseudomorphically strained InxGa1−xAs-Al0.28Ga0.72As ternary-on-ternary heterostructures grown by molecular-beam epitaxy to investigate the change in the transition energy and linewidth as a function of InGaAs well thickness at two different indium compositions x=0.10 and x=0.15, respectively. Sharp exciton peaks as narrow as 4–6 meV were observed from the InGaAs wells grown at 530 °C with 1 min of growth interruption at the top and bottom heterointerfaces. The linewidth decreases as the well thickness is increased up to 300 A(ring). In addition, there are signs of linewidth broadening at higher well thicknesses which may indicate the onset of plastic relaxation. Relatively small variations in the transition energy were observed at well thicknesses which are above the theoretical critical thickness as calculated by the Matthews–Blakeslee model [J. Cryst. Growth 27, 118 (1974)], suggesting the existence of a second critical thickness higher than the theoretical value. Good agreement between experimental and calculated transition energy versus well thickness data was obtained, from which the conduction-band offset ΔEc/ΔEg was estimated to be 0.65±0.05 for x=0.10–0.15, consistent with the results derived from other techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357135
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  • 5
    Electronic Resource
    Electronic Resource
    Band gap and activation energy in amorphous silicon doping-modulated superlattices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1392-1394 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that both the activation energy and optical energy gap of amorphous silicon doping-modulated nipi... superlattices vary consistently with i layer thickness. There is a pronounced maximum at an i layer thickness of approximately 14 nm. The occurrence of this maximum, and the general variation, correspond exactly with the behavior of the persistent photoconductivity for the structures. The results are explained in terms of the development of deep trap boron-phosphorus complexes which are rendered shallow by hydrogen accretion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99125
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  • 6
    Electronic Resource
    Electronic Resource
    Tunable photoluminescence from amorphous silicon doping modulated multilayers (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4958-4962 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-temperature photoluminescence has been measured from nipi ... doping modulated multilayers of amorphous hydrogenated silicon with a range of i layer thickness di. It shows a monotonic decrease from 1.40 to 1.14 eV in peak energy photoluminescence EPL as di reduces, unlike the behavior of optical band gap and persistent photoconductivity which show a peak. The results are interpreted to show that P and B diffusion occur during layer growth to form compensated regions with the degree of compensation controlling the value of EPL. A value of the P diffusion coefficient at 220 °C is deduced of 4×10−17 cm2 s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343768
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  • 7
    Electronic Resource
    Electronic Resource
    Persistent photoconductivity from thin layer amorphous silicon doping modulated superlattices (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1591-1596 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Further evidence about the phenomenon of persistent photoconductivity (PPC) in doping modulated amorphous hydrogenated silicon multilayers, has been obtained by studying nipi structures with fixed p- (3.3 nm) and n- (7.7 nm) layer thicknesses but varying i-layer thicknesses. The PPC showed a fairly sharp maximum at i-layer thicknesses of 14 nm, being over 103 times the dark conductivity 10 min after a 20-s light flash at 50 mW cm−2. The decay rates indicate that at least two kinds of trapping centers are involved. From the various phenomena it is proposed that the effect is due to B-P complexes which form deep traps but become shallow after H accretion. Junctions are not directly responsible but different H concentrations in differently doped layers play a key role.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339945
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  • 8
    Electronic Resource
    Electronic Resource
    Origin of field-enhanced conductivity in amorphous hydrogenated silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3821-3824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the phenomenon of field-enhanced conductivity in amorphous hydrogenated silicon films is due to alkali atom contamination from hot glass substrates. The various electrical phenomena can be explained by a reaction between alkali atoms and dangling bond sites in which alkali ions are formed and the dangling-bond-state distribution altered. The rate of the reverse reaction is reduced by applied fields, leaving an increase in conductivity that can be orders of magnitude in size.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339224
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  • 9
    Electronic Resource
    Electronic Resource
    Intersubband absorption from InGaAlAs/InAlAs multiple quantum-well structures grown by molecular-beam epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3579-3581 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intersubband absorption from the InGaAlAs/InAlAs multiple quantum-well structures, lattice matched to InP, for the long-wavelength infrared detection has been investigated. It is found that the strong absorption resulting from the bound-to-bound transition in the quaternary material is observable and the wavelength of the absorption varies with the well width while the barrier width remains unchanged. The photoluminescence results indicate that the absorption originates from the transition of the electrons from the ground energy level to the first excited energy level in the conduction band of the well material. Our experimental results are also in good agreement with the theoretical estimation based on the simple finite barrier model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126712
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of Be doping on the absorption of InGaAs/AlGaAs strained quantum-well infrared photodetectors grown by molecular-beam epitaxy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1570-1572 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the effect of Be doping in the well layers on the absorption of the p-type strained InGaAs/AlGaAs quantum-well infrared photodetectors. It is found that the absorption spectrum originated from the bound-to-bound intersubband transition shifts towards the low-wavelength side as the doping density is increased, due to the band gap shrinkage and widened well width. The full width at half maximum of the absorption spectrum increases with doping density due mainly to the increased roughness at the well–barrier interfaces. The observed results are in good agreement with the estimated values after taking the compressive strain, band gap shrinkage of the well layers, and the increased well width into account. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123619
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