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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence and time-resolved photoluminescence were used to study the heterointerface configuration in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy with growth interruption. Photoluminescence spectra of the growth-interrupted sample are characterized by multiplet structures, with energy separation corresponding to a 0.8 monolayer difference in well width, rather than 1 monolayer as expected from the "atomically smooth island'' picture. By analyzing the thermal transfer process of the photogenerated carriers and luminescence decay process, we further exploit the exciton localization at the interface microroughness superimposed on the extended growth islands. The lateral size of the microroughness in our sample was estimated to be 5 nm, less than the exciton diameter of 15 nm. Our results strongly support the bimodal roughness model proposed by Warwick et al. [Appl. Phys. Lett. 56, 2666 (1990)]. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3579-3581 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intersubband absorption from the InGaAlAs/InAlAs multiple quantum-well structures, lattice matched to InP, for the long-wavelength infrared detection has been investigated. It is found that the strong absorption resulting from the bound-to-bound transition in the quaternary material is observable and the wavelength of the absorption varies with the well width while the barrier width remains unchanged. The photoluminescence results indicate that the absorption originates from the transition of the electrons from the ground energy level to the first excited energy level in the conduction band of the well material. Our experimental results are also in good agreement with the theoretical estimation based on the simple finite barrier model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1570-1572 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the effect of Be doping in the well layers on the absorption of the p-type strained InGaAs/AlGaAs quantum-well infrared photodetectors. It is found that the absorption spectrum originated from the bound-to-bound intersubband transition shifts towards the low-wavelength side as the doping density is increased, due to the band gap shrinkage and widened well width. The full width at half maximum of the absorption spectrum increases with doping density due mainly to the increased roughness at the well–barrier interfaces. The observed results are in good agreement with the estimated values after taking the compressive strain, band gap shrinkage of the well layers, and the increased well width into account. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 340 (1991), S. 371-375 
    ISSN: 1434-601X
    Keywords: 24.30.Cz ; 25.70.Gh
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The strength functions fore + e − pair decay of the isoscalar and isovector giant monopole resonances in highly excited nuclei are derived and used in a statistical model calculation of thee + e − pair energy spectrum from compound nuclear decay in110Sn following a fusion evaporation reaction. This result is then compared to thee + e − spectrum derived from internal pair decay of the giant dipole and giant quadrupole resonances. The computation shows that the pair decay from the excited-state GDR dominates the pair spectrum over the region of all giant resonances, exceedingL=0 transitions by at least a factor of ten. We also compute the angular correlations betweene + ande − for theL=0, L=1 andL=2 transitions and estimate their power to discriminate between the various multipolarities.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1572-9567
    Keywords: alumina ; calorimetry ; enthalpy ; melting point ; latent heat ; solidification
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In this paper the authors describe the use of a high-temperature drop calorimeter with autoadiabatic control for the measurment of the enthalpy of α-Al2O3 in the temperature range 550 to 2400 K for both solid and liquid phases. Equations representing the enthalpy of both solid and liquid states are obtained from the data with the use of a computer. In addition to the melting point, T m=2328±7 K, the latent heat of solidification, L=1137.90 J · g−1, has also been determined. The results of the present work are compared with those reported in the literature.
    Type of Medium: Electronic Resource
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