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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of strained InxGa1−xAs-Al0.28Ga0.72As heterostructures grown by molecular-beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 246-250 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence measurements were carried out on pseudomorphically strained InxGa1−xAs-Al0.28Ga0.72As ternary-on-ternary heterostructures grown by molecular-beam epitaxy to investigate the change in the transition energy and linewidth as a function of InGaAs well thickness at two different indium compositions x=0.10 and x=0.15, respectively. Sharp exciton peaks as narrow as 4–6 meV were observed from the InGaAs wells grown at 530 °C with 1 min of growth interruption at the top and bottom heterointerfaces. The linewidth decreases as the well thickness is increased up to 300 A(ring). In addition, there are signs of linewidth broadening at higher well thicknesses which may indicate the onset of plastic relaxation. Relatively small variations in the transition energy were observed at well thicknesses which are above the theoretical critical thickness as calculated by the Matthews–Blakeslee model [J. Cryst. Growth 27, 118 (1974)], suggesting the existence of a second critical thickness higher than the theoretical value. Good agreement between experimental and calculated transition energy versus well thickness data was obtained, from which the conduction-band offset ΔEc/ΔEg was estimated to be 0.65±0.05 for x=0.10–0.15, consistent with the results derived from other techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357135
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  • 2
    Electronic Resource
    Electronic Resource
    Band gap and activation energy in amorphous silicon doping-modulated superlattices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1392-1394 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been found that both the activation energy and optical energy gap of amorphous silicon doping-modulated nipi... superlattices vary consistently with i layer thickness. There is a pronounced maximum at an i layer thickness of approximately 14 nm. The occurrence of this maximum, and the general variation, correspond exactly with the behavior of the persistent photoconductivity for the structures. The results are explained in terms of the development of deep trap boron-phosphorus complexes which are rendered shallow by hydrogen accretion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99125
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  • 3
    Electronic Resource
    Electronic Resource
    Persistent photoconductivity from thin layer amorphous silicon doping modulated superlattices (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1591-1596 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Further evidence about the phenomenon of persistent photoconductivity (PPC) in doping modulated amorphous hydrogenated silicon multilayers, has been obtained by studying nipi structures with fixed p- (3.3 nm) and n- (7.7 nm) layer thicknesses but varying i-layer thicknesses. The PPC showed a fairly sharp maximum at i-layer thicknesses of 14 nm, being over 103 times the dark conductivity 10 min after a 20-s light flash at 50 mW cm−2. The decay rates indicate that at least two kinds of trapping centers are involved. From the various phenomena it is proposed that the effect is due to B-P complexes which form deep traps but become shallow after H accretion. Junctions are not directly responsible but different H concentrations in differently doped layers play a key role.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339945
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  • 4
    Electronic Resource
    Electronic Resource
    Origin of field-enhanced conductivity in amorphous hydrogenated silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3821-3824 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the phenomenon of field-enhanced conductivity in amorphous hydrogenated silicon films is due to alkali atom contamination from hot glass substrates. The various electrical phenomena can be explained by a reaction between alkali atoms and dangling bond sites in which alkali ions are formed and the dangling-bond-state distribution altered. The rate of the reverse reaction is reduced by applied fields, leaving an increase in conductivity that can be orders of magnitude in size.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339224
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence, intersubband absorption, and double crystal x-ray diffraction in p-doped InGaAs/AlGaAs strained multiple quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1430-1432 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the correlation of photoluminescence (PL), infrared intersubband absorption, and double crystal x-ray diffraction (DCXRD) data for a p-doped InGaAs/AlGaAs strained multi- ple-quantum-well structure grown by molecular beam epitaxy. A PL doublet at 1.476 and 1.563 eV involves two confined holes states and their 87 meV separation is in good agreement with the measured intersubband absorption of about 14.5 μm (85 meV). Furthermore, when the well width obtained from DCXRD measurement is included excellent agreement with an envelope function calculation is found for the energy levels determined by PL and intersubband absorption energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112006
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  • 6
    Electronic Resource
    Electronic Resource
    High-field domain formation in GaAs/AlGaAs superlattices (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1120-1122 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of high-field domains in a semiconductor superlattice is verified using a GaAs/AlGaAs superlattice structure with multiple-quantum wells of different well thicknesses but identical barrier width grown by molecular beam epitaxy. Low-temperature current–voltage (I–V) measurements under forward and reverse bias showed that the high-field domain is first formed at the region of wider well thickness instead of preferentially at the anode or the cathode. The electron tunneling process through a tight-binding superlattice with weak coupling between adjacent wells is discussed in terms of the formation and extension of the high-field domains through the superlattice region. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113832
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  • 7
    Electronic Resource
    Electronic Resource
    Investigation of high-field domain formation in tight-binding superlattices by capacitance–voltage measurements (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1908-1910 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method involving capacitance–voltage (C–V) measurements has been used to investigate the process of high-field domain formation in semiconductor structures with tight-binding GaAs/AlGaAs superlattices grown by molecular beam epitaxy. Current–voltage (I–V) measurements carried out at 77 K showed two series of current oscillations associated with the sequential tunneling process as a result of the high-field domain formation. Accumulation of electrons in the quantum wells due to the extension of the high-field domains through the superlattice as a result of increasing bias is detected as a sharp increase in the capacitance which clearly corresponds to a sharp reduction in the current. Preliminary results of the frequency dependence of the C–V characteristic corresponding to the sequential tunneling process as an effect of the high-field domain formation are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114373
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of Be doping on the absorption of InGaAs/AlGaAs strained quantum-well infrared photodetectors grown by molecular-beam epitaxy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1570-1572 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the effect of Be doping in the well layers on the absorption of the p-type strained InGaAs/AlGaAs quantum-well infrared photodetectors. It is found that the absorption spectrum originated from the bound-to-bound intersubband transition shifts towards the low-wavelength side as the doping density is increased, due to the band gap shrinkage and widened well width. The full width at half maximum of the absorption spectrum increases with doping density due mainly to the increased roughness at the well–barrier interfaces. The observed results are in good agreement with the estimated values after taking the compressive strain, band gap shrinkage of the well layers, and the increased well width into account. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123619
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  • 9
    Electronic Resource
    Electronic Resource
    Dark current and infrared absorption of p-doped InGaAs/AlGaAs strained quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1095-1097 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dark current as a function of temperature and infrared absorption of the p-doped In0.15Ga0.85As/Al0.45Ga0.55As multiple quantum well structures grown by molecular beam epitaxy are investigated. The dark current Id of the structure is found to be basically symmetrical over a voltage range from −10 to +10 V. It is about 10−9 A at a bias of 1 V at 80 K, more than two orders of magnitude lower than that reported for p-doped GaAs/AlGaAs QW structures with the same size. It is also found that Id is proportional to T exp[−(EC–EF)/kT] at 70 K and above while at temperatures below 30 K it does not change significantly. The EC–EF decreases with the increase in bias in an exponential form, due likely to energy bandgap bending. A strong infrared absorption peaked at a wavelength of 10.7 μm is in excellent agreement with the estimated value of 10.4 μm. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122095
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  • 10
    Electronic Resource
    Electronic Resource
    Intersubband absorption from InGaAlAs/InAlAs multiple quantum-well structures grown by molecular-beam epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3579-3581 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intersubband absorption from the InGaAlAs/InAlAs multiple quantum-well structures, lattice matched to InP, for the long-wavelength infrared detection has been investigated. It is found that the strong absorption resulting from the bound-to-bound transition in the quaternary material is observable and the wavelength of the absorption varies with the well width while the barrier width remains unchanged. The photoluminescence results indicate that the absorption originates from the transition of the electrons from the ground energy level to the first excited energy level in the conduction band of the well material. Our experimental results are also in good agreement with the theoretical estimation based on the simple finite barrier model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126712
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