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Deep level defects in n-type GaN grown by molecular beam epitaxy (1998)

Wang, C. D. ; Yu, L. S. ; Lau, S. S. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 1211-1213

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Deep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy. Five deep-level electronic defects were observed, with activation energies E1=0.234±0.006, E2=0.578±0.006, E3=0.657±0.031, E4=0.961±0.026, and E5=0.240±0.012 eV. Among these, the levels labeled E1, E2, and E3 are interpreted as corresponding to deep levels previously reported in n-GaN grown by both hydride vapor-phase epitaxy and metal organic chemical vapor deposition. Levels E4 and E5 do not correspond to any previously reported defect levels, and are characterized for the first time in our studies. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.121016

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