Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 482-484
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The photoluminescence of CuInS2 thin films and solar cells is investigated as a function of postdeposition treatments for different temperatures and excitation intensities. Annealing in hydrogen atmosphere causes an increase of PL intensity at 1.445 eV by more than a factor of 100, while subsequent annealing in oxygen or air ambient passivates this transition, which is ascribed to a donor-acceptor pair recombination between a sulphur vacancy and a copper vacancy. A defect mechanism is suggested that assumes the passivation of sulphur vacancies by oxygen in grain surfaces which can be activated by hydrogen annealing. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119585
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