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  • 1
    Electronic Resource
    Electronic Resource
    DLTS Combined with Perturbed Angular Correlation (PAC) on Radioactive 〈sup〉111〈/sup〉In Atoms in Ge (1997)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 258-263 (Dec. 1997), p. 53-58 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/02/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.258-263.53.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of Tunneling on Trapping Kinetics in Thin Layers (1995)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 185-188 (Mar. 1995), p. 91-98 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.185-188.91.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Electroreflectance of CuInS2 thin film solar cells and dependence on process parameters (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3049-3054 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroreflectance (ER) of CuInS2 thin film solar cells prepared by sequential processing is investigated as a function of the process parameters Cu/In ratio and sulfurization temperature in order to get a better understanding of the growth mechanisms. A detailed interpretation of the ER spectra is presented. The disappearance of the ER signal under indium-rich conditions is explained by a superficial CuIn5S8 secondary phase. An additional structure in ER spectra below the band gap energy is attributed to electroabsorption and is explained by the transition between copper vacancies and sulfur vacancies in CuInS2 as identified by photoluminescence. The strong dependence of this electroabsorption structure on the process parameters and the occurrence of the superficial CuIn5S8 secondary phase is explained by phase transitions in the equilibrium phase diagrams of the metal sulfides formed during sulfurization. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1340007
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  • 4
    Electronic Resource
    Electronic Resource
    A deep-level transient spectroscopy variation for the determination of displacement threshold energies in GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2781-2785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deep-level transient spectroscopy (DLTS) method is optimized for the observation of radiation damage in semiconductors. A new isothermal variation of the technique is applied to the study of displacement defects in GaAs in order to determine threshold energies and displacement cross sections. A pronounced anisotropy is found for the threshold energy. A linearly increasing displacement probability function is shown to properly model the displacement cross section in 〈100(approximately-greater-than) direction, as compared with the 〈111(approximately-greater-than) direction which requires only a simple step function. Anisotropy leads to a tailing off in the displacement cross section at energies below an "effective'' threshold of about 15.5 eV in the 〈100(approximately-greater-than) direction, indicating that the 〈111(approximately-greater-than) direction is more sensitive to displacement damage than the 〈100(approximately-greater-than) direction. Differences in the damage between these two directions are as large as a factor of 2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353054
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  • 5
    Electronic Resource
    Electronic Resource
    Admittance properties of thin/thick metal-oxide-semiconductor structures. I. Experiment and equivalent network (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3381-3387 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A metal-oxide-semiconductor structure with a stepped oxide under a common gate metallization is investigated. The G(V) and C(V) curves strongly deviate from those of wafers with uniform oxide thicknesses: Three sharp G(V) maxima and a well structured C(V) curve are seen. A general equivalent network has been established for the description of the behavior of the structure. By choosing special bias conditions, the network can be reduced to simpler configurations. In this case all the network elements are accessible from independent measurements (secondary electron microscopy, control samples), so that the C(V) curve can be reconstructed solely from geometrical and technological data for its essential portions. The network is exploited for a separate determination of the surface-state density underneath the thin and the thick oxide regions. This has been done for a series of thin/thick oxide combinations. A lateral field induced p-i junction is found underneath the thick/thin oxide boundary for appropriate biases, V. The G (ω;V=const.) and C(ω;V=const.) analysis delivers the (forward)conductance and capacitance of the junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350934
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  • 6
    Electronic Resource
    Electronic Resource
    Charges in metal-oxide-semiconductor samples of various technologies induced by 60Co-γ- and x-ray quanta (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 393-399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of x-ray and 60Co-γ irradiations on differently processed metal-oxide-semiconductor (MOS) capacitors are carried out. From experiments at 80 K, the field-dependent charge yield fH(E) and the ionization coefficient K are found. In addition, a simple method is described for calculating the hole trapping factor A. For this purpose, just the measured values of the midgap voltage shifts after irradiation at 80 K and room temperature (RT) are used. The investigations of oxide charge buildup Qfr and interface state generation Dit by x-ray irradiation at RT indicate that samples subject to high-temperature (HT) annealing exhibit a more sensitive interface and a less sensitive bulk of the oxide than those not subject to this step. This is found to be in contrast to results of 60Co-γ irradiations at RT. In this case, samples subject to HT annealing show higher sensitivities of the interface and the oxide bulk than corresponding samples without HT annealing. Independent of technology and oxide thickness, the oxide bulk and the interface are more sensitive to x-ray irradiation than to 60Co-γ irradiation. The dependency of the midgap voltage shift, the interface state density and the hole trapping factor on oxide thickness dox is shown. For both x-ray and 60Co-γ irradiation the same relationships ΔUMG∝dnox; ΔDit∝dn−1ox; A∝dn−2ox (n=2.6) are found (ΔUMG is the midgap voltage shift). Differences between x-ray and 60Co-γ irradiations occur in the coefficients of the ΔUMG, ΔDit, and A vs dox proportionalities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334763
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  • 7
    Electronic Resource
    Electronic Resource
    Improved efficiency of crystalline silicon solar cells due to He+ implantation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2700-2702 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of He+ implantation on the properties of crystalline silicon solar cells has been investigated. The implantation of 550 keV He+ ions into the masked surface of solar cells was used to form a two-dimensional defect layer inside the cell space-charge region. For suitable implantation doses it is possible to increase the photocurrent without degenerating the values for open circuit voltage thus resulting in an improved efficiency of the cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111496
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 482-484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence of CuInS2 thin films and solar cells is investigated as a function of postdeposition treatments for different temperatures and excitation intensities. Annealing in hydrogen atmosphere causes an increase of PL intensity at 1.445 eV by more than a factor of 100, while subsequent annealing in oxygen or air ambient passivates this transition, which is ascribed to a donor-acceptor pair recombination between a sulphur vacancy and a copper vacancy. A defect mechanism is suggested that assumes the passivation of sulphur vacancies by oxygen in grain surfaces which can be activated by hydrogen annealing. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119585
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  • 9
    Electronic Resource
    Electronic Resource
    Hydrogen implantation and diffusion in silicon and silicon dioxide (1995)
    Springer
    Applied physics 61 (1995), S. 381-388 
    Details
    ISSN: 1432-0630
    Keywords: 61.70.Tm ; 79.20.Nc ; 66.30.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540112
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  • 10
    Electronic Resource
    Electronic Resource
    Hydrogen implantation and diffusion in silicon and silicon dioxide (1995)
    Springer
    Applied physics 61 (1995), S. 381-388 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.70.Tm; 79.20.Nc; 66.30.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the 15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540112
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