Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 1918-1920
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate the fabrication of a long-wavelength laser on a (211) InP substrate, with the expectation of reducing threshold current density. We found that InGaAsP single quantum wells (SQWs) could be fabricated with good optical properties provided the SQW layers were not made too thin. A laser that had an unstrained multiple-quantum-well active layer emitting at 1.3 μm was fabricated on a (211)A InP substrate. Its threshold current density was 900 A/cm2, which is comparable to the value for the same type of laser on a (100) substrate. These results suggest that long-wavelength lasers with satisfactory quality can be fabricated on a (211)A substrate. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119980
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