Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
70 (1997), S. 2277-2279
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the fabrication and characterization of vertical geometry transparent Schottky barrier ultraviolet detectors based on n−/n+-GaN structures grown over sapphire substrates. Spectral responsivity measurements were made using illumination through the UV transparent Schottky barrier metal. A responsitivity as high as 0.18 A/W was measured for wavelengths shorter than the absorption edge of GaN. The detector speed was RC limited and the fall time was 118 ns. The 1/f noise is identified to be the main noise contribution. At 300 Hz, we measure the noise equivalent power at less than 4×10−9 W. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.118837
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