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Control of field screening effects in GaInAs(P)/GaInAsP quantum-confined Stark effect modulator structures (1996)

König, P. ; Geiger, M. ; Ottenwälder, D. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 2698-2700

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We compare the field screening behavior of quantum-confined Stark effect modulator structures where the GaInAsP/InP heterojunction is in the intrinsic (standard structure) or in the doped regions (modified structure) at working wavelengths of 1.55 and 1.3 μm. The modified structures are obtained by expanding the GaInAsP confinement layers into the p-doped and n-doped regions without changing the total intrinsic layer thickness. The effectiveness of the InP heterobarriers for the holes on the p-side and for the electrons on the n-side is thereby lowered. A significant reduction of field screening for the modified structures is achieved. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.117682

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