ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Gain-guided, injection lasers using AlAsSb for optical confinement and a strained InAsSb/InAs multiquantum well active region were grown by metalorganic chemical vapor deposition. The semi-metal properties of a p-GaAsSb/n-InAs heterojunction are utilized as a source for injection of electrons into the active region of the laser. In pulsed mode, the laser operated up to 210 K with an emission wavelength of 3.8–3.9 μm. We also report on the two-color emission of a light-emitting diode with two different active regions to demonstrate multistage operation of these "unipolar '' devices. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.118141