ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A non-toxic and non-flammable organosilicon source having alternate Si–C bonding structure, bis-trimethylsilylmethane [C7H20Si2], was first used to deposit epitaxial β-SiC films at low growth temperature by chemical vapor deposition. Epitaxial β-SiC films were successfully grown on carburized Si(100) substrates at temperatures as low as 1100 °C, although the carburized buffer layer was a well-oriented, (100) polycrystalline film. Transmission electron microscopy analysis revealed that the films contain twins, stacking faults, and antiphase boundaries. Without the carburized buffer layer, highly (111) preferred oriented β-SiC films were grown by increasing the growth temperature. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117868
