ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition(ALD) method. The electrical properties of La2O3 on 4H-SiC were examined usingmetal-insulator-semiconductor (MIS) structures of Pt/La2O3(18nm)/4H-SiC andPt/Al2O3(10nm)/La2O3(5nm)/4H-SiC. For the Pt/La2O3(18nm)/4H-SiC structure, even though theleakage current density was slightly reduced after the rapid thermal annealing at 500 oC,accumulation capacitance was gradually increased with increasing bias voltage due to a high leakagecurrent. On the other hand, since the leakage current in the accumulation regime was decreased forthe Pt/Al2O3/La2O3/4H-SiC MIS structure owing to the capped Al2O3 layer, the capacitance wassaturated. But the saturation capacitance was strongly dependent on frequency, indicating a leakyinterfacial layer formed between the La2O3 and SiC during the fabrication process ofPt/Al2O3(10nm)/ La2O3(5nm)/ 4H-SiC structure
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1083.pdf
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