ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The authors attempted to grow a semi-insulating SiC epitaxial layer by in-situ vanadiumdoping. The homoepitaxial growth of the vanadium-doped 4H-SiC layer was performed by MOCVDusing the organo-silicon precursor, bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) and themetal-organic precursor, bis-cyclopentadienylvanadium (Verrocene, [C10H10V]). Vanadium dopingeffect on crystallinity of epilayer was very destructive. Vanadium-doped epilayers grown on normalcondition had various surface or crystal defects such as micropipes, polytype inclusions. But thiscrystallinity degradation was overcome by high growth temperature. For the measurement of theresistivity of the highly resistive vanadium-doped 4H-SiC epilayers, the authors used theon-resistance technique. Based on the measurements of the on-resistance of the epilayers using thecurrent-voltage technique, it is shown that the residual donor concentration of the epilayers wasdecreased with increasing partial pressure of verrocene. The resistivity of the vanadium-doped4H-SiC epilayer was about 107 /cm
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.113.pdf
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