ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this study, we report defect analysis in 4H-SiC crystals of high nitrogen doping grown bysublimation method, and we discuss key points for defect restraint. The growth was performed in twokinds of growth directions; c-axis and a-axis. In the c-axis grown crystal with carrier density greaterthan 1×10-19cm-3, defect propagation was confirmed in the vertical direction for a growth directionaffected by the doping by x-ray topography. This phenomenon was not observed in the a-axis growncrystals. In sublimation growth, the quantity of impurities tends to increase as growth rate decreases.Therefore, in the c-axis growth of doped 4H-SiC bulk crystals, we have to be careful so that dopantdoes not increase too much without intention in grown layers with lower growth rate, for example atthe beginning and end of the growth
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.239.pdf
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