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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1314-1317 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A silicon–oxide layer was deposited by a low-pressure chemical vapor deposition technique at temperatures as low as 400 °C for gate dielectric material of the 4H-SiC metal–oxide–semiconductor (MOS) capacitors. Interfacial properties such as the amount of effective charge (Neff), interfacial oxide trapped density (Dit) and hot-carrier tolerance of the 4H-SiC(0001) MOS capacitors were evaluated by simultaneous C–V measurement as a dependence of a post-oxidation annealing (POA) at temperatures ranging from 1000 to 1200 °C. It was found that the POA temperature dependence of the Dit was different from that of the Neff. On the other hand, the POA dependence of hot-carrier tolerance was similar to that of the Dit. In consequence, those interfacial properties were sufficiently improved and became stable above the POA temperature of 1100 °C, which corresponds to the softening temperature of SiO2 bulk. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2850-2852 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting NdBa2Cu3O7−δ thin films have been prepared in ultrahigh vacuum by the molecular beam epitaxy (MBE) method using a supersonic molecular beam of nitrogen dioxide as an oxidizing agent. A new type of supersonic molecular beam source has been developed, which has a liquid nitrogen trap for cryogenic pumping and is small enough in size to be installed in a conventional MBE system. Films with a transition temperature of about 30 K have been obtained in situ without post-deposition annealing. Throughout deposition epitaxial growth of the films was observed in situ by reflection high-energy electron diffraction.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1540-1542 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of hydrogenated amorphous silicon films on Al substrates in a flow reactor was studied using infrared reflection absorption spectroscopy. All three hydride species (SiHx , x=1–3) in the growing films were detected as stretching and bending absorption bands in P polarization spectra. The dominant absorption band, initially originating from higher hydrides, was shifted to lower wave numbers with an increase of film thickness. A steep rise in absorption intensity at the initial stage and a time delay in SiH emergence are discussed in terms of the enhancement of detection sensitivity in a hydrogen-rich layer and the time needed for the formation of a bulk-network structure, respectively.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1028-1030 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Real-time in situ observations of the growth of a-Si:H films have been carried out in a rf glow discharge plasma reactor by use of infrared reflection absorption spectroscopy. Deuterium substitution of an interface layer is employed so as to differentiate the higher hydride species on the growing surface from those located at the film interface on the substrate. A three-layer model is presented to give a quantitative discussion on the absorption signal intensity in the reflection spectroscopy with respect to the normal incident transmission spectroscopy.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependence of threshold voltage in n-channel SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) was studied. Linear relation was observed between the threshold voltage shift when the temperature varies from −150 to 150 °C and the number of the interface states present within the energy range of 0.2–0.4 eV from the conduction band edge energy Ec. This relationship revealed that the interface state profile near Ec in n-channel SiC MOSFETs can be represented by that in n-type SiC MOS capacitors. The relationship between the channel mobility and the interface state profile also suggested that the interface states within the energy range of 0.2–0.4 eV from Ec have little influence on the channel mobility. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4168-4174 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous silicon dioxide films were deposited from oxygen, disilane (Si2H6), and perfluorosilanes (Si2F6 or SiF4) by photochemical vapor deposition using a deuterium lamp at a substrate temperature of as low as 200 °C. It was found that by mixing Si2F6, defects such as H and OH in the films were effectively removed with an enhancement in the growth rate and a slight doping of fluorine into the films, while SiF4 had no effect except a little doping of fluorine. The generation and extinction of defects including H, OH, and SiSi were investigated quantitatively by measuring infrared spectra and vacuum ultraviolet absorptions at the optical band edge. The model on the deposition process was proposed that photodissociated F-containing radicals eliminate H and activate the growing surface, resulting in enhancing the deposition rate.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3430-3436 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To utilize the excellent properties of silica (SiO2) glass for a glass laser host, neodymium-aluminum (Nd–Al) and neodymium-phosphorous (Nd–P) co-doped SiO2 glasses were studied. They were prepared by plasma-torch chemical vapor deposition (CVD). It was found that a doping level less than ten times the number of Nd for the Al co-dopant and less than about fifteen times for the P co-dopant was enough to remove undesirable fluorescence properties of Nd-doped SiO2 glasses and make them suitable for laser application. The clustering Nd ions disperse well in a glass matrix and lasing fluorescence increases. The effects of the Al dopant on the density and Raman spectra were also studied to obtain structural information. On the basis of glass science and solution chemistry, the marked effects of both dopants were explained by the following model. Nd ions can be well incorporated into a SiO2 glass network through co-dopant oxide forming a solvation shell around the Nd ions. This model leads to an expansible method for coordination control around active ions in SiO2 glass. A preliminary experiment on laser oscillation using Nd–Al co-doped SiO2 glass was also carried out.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3559-3565 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preparation of amorphous silica doped with organic dye molecules, 1,4-dihydroxyanthraquinone, and the observation of the amorphous structure of this system by photochemical hole burning using the dye molecules as a spectral probe are reported. The various kinds of organic molecule-doped inorganic glassy materials are obtained with the alcoholate method. The appearance of the photochemical hole in this system shows the molecular dispersion of the dye molecules in the matrix without cracking or decomposition. The burning yield, 1.2×10−4, is the same as that observed in organic glasses. The intrinsic holewidth, 0.9 cm−1 at zero burning time limit, the burning-time dependence and the annealing effects on the hole profile were observed and compared with those in the alcoholic organic glass. It is suggested that the nearest-neighbor structures around quinizarin molecules consist of some hydroxyl groups. The matrix cages seem to be fairly tight and rigid in comparison with those of the alcoholic glass. The possibility that the quinizarin molecule or molecules are embedded within the pore of amorphous SiO2 with some amount of solvent molecules, mainly ethanol or water, seems to be excluded. The annealing effects of the burned hole indicate that there exist two kinds of mechanisms which dominate the temperature dependence of the holewidth in the present system. One is already dominant below about 27 K which gives rise to the reversible behavior in the holewidth with temperature, and the other becomes effective above 27 K and is irreversible with temperature cycling. Some discussions are given on the origin of these relaxation mechanisms in this system which are inherent in the structure of amorphous materials.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2154-2158 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact supersonic molecular beam source was developed that has a liquid nitrogen trap to cryogenically pump the gas and is small enough in size to install in conventional molecular beam epitaxy (MBE) systems. With the source, well-collimated molecular beams of N2O and NO2 whose flux densities are ∼1016 molecules cm−2 s−1 are generated. The effectiveness of the source was proved in the preparation of oxide superconducting thin films by MBE with an NO2 beam where as-grown superconducting films were obtained in high vacuum of ≤10−5 Pa.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1289-1291 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomically flat terraces and steps with a height of one c-axis lattice parameter have been observed with atomic force microscopy (AFM) on the surface of a flux-grown YBa2Cu3O7−δ (YBCO) single crystal. Homoepitaxial growth of YBCO on the flux-grown single crystal has been investigated using reflection high-energy electron diffraction (RHEED). Initial stage of the RHEED intensity oscillation without anomalous peaks usually observed in heteroepitaxial growth suggests epitaxial growth of YBCO on the substrate surface from the beginning of deposition. A surface image of AFM for the homoepitaxial film reveals coalescent step-like structures and two-dimensional islands of one c-axis height on the growing surface of YBCO. The observed RHEED oscillation and AFM image are consistent with the two-dimensional nucleation growth of the film.
    Type of Medium: Electronic Resource
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