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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 4867-4872 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The vacuum ultraviolet absorption cross sections of SiH4, GeH4, Si2H6, and Si3H8 are reported for the wavelength region 107–220 nm using synchrotron radiation as a light source. Absorption maxima of these compounds were found at the exciting wavelengths of 115–119 nm. Broad peaks observed were mostly assigned as primarily Rydberg transitions of the σSiH and σSiSi bonding electrons to the 4s, 4p, and 4d orbitals. The absorption features of germane resemble those of monosilane. In the photoexcitation of monosilane, the emission of the SiH(A˜ 2Δ→X˜ 2Π) transition was observed and its onset was found to be 132±2nm. The absorption spectrum of disilane showed five peaks. They were mostly assigned as 2a1g→4s, 2a1g→np(n=4−6) transitions and the strongest band was overlapped by 1eg→4d and 1eu→4p Rydberg transitions. In trisilane molecules three very weak and broad peaks were recognized and assigned as 3b2→4s, 4p and 4a1→4s, 4d Rydberg transitions. The strongest band was tentatively assigned as the superposition of 1a2→4d and 3a1→4p Rydberg excitations.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1925-1927 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon (a-Si:H) films were prepared by laser-induced photochemical vapor deposition using ArF and F2 excimer lasers. Disilane (Si2H6) and trisilane (Si3H8) diluted with helium were used as the reaction gases for the ArF laser and monosilane (SiH4), disilane, and trisilane for the F2 laser. A good linear correlation was found between the estimate of deposition rate derived from gas phase photoabsorption and the observed deposition rate, indicating that one-photon process governs the film deposition rate. Density of excited molecules in the gas phase was found to be an important factor in controlling the film properties. Laser irradiation onto the growing surface also affects the film properties through a decrease in the hydrogen incorporated in the film.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3515-3517 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the role of surface termination during growth of crystalline silicon at low temperatures. Microcrystalline silicon was fabricated using plasma-enhanced chemical-vapor deposition with a hydrogen-diluted dichlorosilane (SiH2Cl2)/monosilane (SiH4) mixture to study the role of hydrogen and chlorine in crystal formation. When varying the fraction of SiH2Cl2, x=[SiH2Cl2]/([SiH4]+[SiH2Cl2]), good crystallinity was obtained for x=0 and 1, whereas the crystallinity was markedly deteriorated for intermediate x. Optical emission spectroscopy of the plasma suggests that film precursors different from SiHx fragments and atomic chlorine are generated for x≠0 and that atomic hydrogen is generated in all cases. Infrared reflection absorption spectroscopy indicates that the surface coverage is hydrogen for x=0, chlorine for x=1, and a hydrogen–chlorine mixture for intermediate x. These results imply that low-temperature growth of crystalline silicon is facilitated on a chlorine-terminated surface as well as on a hydrogen-terminated surface under the presence of atomic hydrogen. The cooperative roles of chlorine and hydrogen are proposed in the crystal growth of Si. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6061-6063 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very thin microcrystalline silicon films have been deposited by plasma-enhanced chemical vapor deposition (CVD) from hydrogen diluted SiH4 gas in order to study its initial growth mechanism. The dependence of the crystallinity and the Si-H bonding configuration on electrical and chemical properties of substrates have been studied using a high sensitivity Raman spectrometer. It is found that conductive and oxygen free substrates provide good crystallinity in the initial stage. The origin of the substrate dependence is explained in terms of the ion bombardment from the plasma and the chemical nature of the substrate surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1540-1542 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of hydrogenated amorphous silicon films on Al substrates in a flow reactor was studied using infrared reflection absorption spectroscopy. All three hydride species (SiHx , x=1–3) in the growing films were detected as stretching and bending absorption bands in P polarization spectra. The dominant absorption band, initially originating from higher hydrides, was shifted to lower wave numbers with an increase of film thickness. A steep rise in absorption intensity at the initial stage and a time delay in SiH emergence are discussed in terms of the enhancement of detection sensitivity in a hydrogen-rich layer and the time needed for the formation of a bulk-network structure, respectively.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1028-1030 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Real-time in situ observations of the growth of a-Si:H films have been carried out in a rf glow discharge plasma reactor by use of infrared reflection absorption spectroscopy. Deuterium substitution of an interface layer is employed so as to differentiate the higher hydride species on the growing surface from those located at the film interface on the substrate. A three-layer model is presented to give a quantitative discussion on the absorption signal intensity in the reflection spectroscopy with respect to the normal incident transmission spectroscopy.
    Type of Medium: Electronic Resource
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