ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with ultra thin(5 nm) remote-PECVD SixNy dielectric layers and investigated electrical properties of nitridedSiO2/4H-SiC interface after oxidizing the SixNy in dry oxygen at 1150 ℃ for 30, 60, 90 min.Improvements of electrical properties have been revealed in capacitance-voltage (C-V) andcurrent density-electrical field (J-E) measurements in comparison with dry oxide. The improvementsof SiC MOS capacitors formed by oxidizing the pre-deposited SixNy have been explained in thispaper
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.647.pdf