ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Schottky barrier diode (SBD) was fabricated by MOCVD using bistrimethylsilylmethane(BTMSM, C7H20Si2) precursor. The 4H-SiC substrates which had differentcrystallographic characteristics were used for the comparison of the crystallinity effect on theelectrical properties of the SBDs. From the measurement of the reverse I-V characteristics of theSBDs with micropipes, it is shown that the origin of the main leakage path and early breakdown (orohmic behavior in reverse bias) in 4H-SiC SBDs is the grain boundaries caused by the inclusions orother defects. The best performance of SBD were shown in the epilayer grown at 1440 oC usinghigh quality substrate, and the breakdown voltage and reverse leakage current were about 450 Vand 10-9 A/cm2, respectively
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.971.pdf
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