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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial growth of CoSi2 on Si wafer using Co/Ta bilayer (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3156-3161 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A CoSi2 epitaxial layer was grown by thermal annealing of Co/Ta bilayer on a Si(100) wafer in the NH3 ambient. During thermal annealing an intermediate Ta layer between a Co layer and a Si wafer played two important roles for epitaxial growth of CoSi2. One was a reduction of a native oxide on a Si substrate, which resulted in an atomically clean Si surface. The other was a limitation of a flux of Co atoms to the Si surface, which made CoSi2 the most stable phase among several cobalt silicide ones. Both roles of the Ta layer made it possible to produce an epitaxial layer of CoSi2 with a coherent interface with a Si substrate, even at the early stage of thermal annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354584
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  • 2
    Electronic Resource
    Electronic Resource
    Infrared spectroscopy study of low-dielectric-constant fluorine-incorporated and carbon-incorporated silicon oxide films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3367-3370 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bonding characteristics of low-dielectric-constant (low-k) fluorine-incorporated silicon oxide (SiOF) and carbon-incorporated silicon oxide (SiOC) films prepared by plasma enhanced chemical vapor deposition were investigated by Fourier transform infrared spectroscopy (FTIR). The frequency of Si–O stretching vibration mode in SiOF film shifted to higher wave number (blueshift) with the increase of fluorine incorporation, while that in SiOC film shifted to lower wave number (redshift) as the carbon content increased. In N2-annealed SiOC film, the Si–O stretching frequency slightly shifted to lower wave number. To elucidate these phenomena, we have developed the "bonding structure model" based on the electronegativity of an atom. The frequency shifts observed in the FTIR spectra of SiOF and SiOC films were well explained by this model. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402152
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  • 3
    Electronic Resource
    Electronic Resource
    Dielectric and electrical properties of sputter grown (Ba,Sr)TiO3 thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 506-513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric behavior containing the film thickness dependent dielectric constant, capacitance–voltage (C–V) variation, and the electrical conduction behavior containing the film thickness dependent current density-electric field variation of rf sputter deposited (Ba,Sr)TiO3 (BST) thin films are analyzed based on a fully depleted film and a combined Schottky-tunneling conduction model. The fact that the capacitance values in C–V increase with the increasing film thickness clearly indicates that the films are fully depleted. Also, the decreasing and nonvariant dielectric constants of the BST film on the Pt and IrO2 electrodes, respectively, with decreasing film thickness are attributed to the intrinsic interfacial layers at the interfaces with electrodes which have low dielectric constants and very small thicknesses. The increased leakage current density of a thicker film under a given electric field originates from the increased interfacial field strength due to the high space charge density in the sputtered film. The leakage current density under the electric field strength smaller than 120 kV/cm is controlled by the Schottky conduction mechanism (thermionic emission), and over that field strength, the tunneling related mechanism (thermionic field emission) is predominant. The calculated leakage current density on the basis of the combined Schottky-tunneling conduction model fits well to the measured current density at various temperatures and over a wide field range. For all the calculations, the electric field dependent dielectric constant is always taken into account. The electric field dependent dielectric constant and high defect or space charge density of the BST film make the conventional analysis of the dielectric and conduction behavior based on the classical metal/semiconductor contact theory invalid. Therefore, a more comprehensive formalism is developed to take into account the field dependent dielectric properties and high charge density of the sputter deposited BST films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370759
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  • 4
    Electronic Resource
    Electronic Resource
    Stress measurements of radio-frequency reactively sputtered RuO2 thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 822-826 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stress-temperature behaviors of RuO2 thin films on (100) Si were investigated by measuring the deflection of film-coated substrates in situ during thermal cycling between 25 and 700 °C. The average biaxial elastic modulus [E/(1−ν)] and thermal expansion coefficient (α) of RuO2 thin film were also determined using the stress-temperature curves of the films on both (100) Si and quartz substrates. For this study, RuO2 thin films were deposited by rf magnetron reactive sputtering at the substrate temperature range of 25–450 °C. As-grown thin films deposited between 300 and 450 °C showed different stress-temperature behavior, which was caused mainly by the microstructure of the thin films. The values of [E/(1−ν)]RuO2 and αRuO2 were calculated to 3.09×1011 Pa and 10.47×10−6/°C, respectively, in the range of 350–600 °C. The αRuO2 obtained from the stress data was compared with the α value calculated from the thermal expansion coefficient, αa and αc, of RuO2 single crystal. Both values were found to be in good agreement. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362891
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial growth of CoSi2 layer on (100)Si and facet formation at the CoSi2/Si interface (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1725-1730 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial nature of the CoSi2 formed on the (100)Si substrate as a result of annealing a Co/Ta bilayer at 500–1000 °C for 20 s in N2 atmosphere is described. At the early stage of annealing, diffusion of Co and Si occurs across the interlayed Ta layer, first forming a CoSi layer on the Si substrate. After that, CoSi2 grains nucleate at the CoSi/Si interface and grow laterally parallel to the surface. Due to a difference in mobility the CoSi2 grains at the interface of the CoSi/Si impede the interface movement, leading the facet formation. Even after annealing below 600 °C, the epitaxial CoSi2 grains are nucleated at the limited area of the nonepitaxial CoSi/Si interface and the faceted corner, and grow laterally along the Si surface. By increasing the annealing temperature, the epitaxiality of CoSi2 improves due to the increased lateral growth rate of the CoSi2. However, annealing above 900 °C impairs the CoSi2 crystallinity because the interlayered Ta loses its function as a diffusion barrier due to the formation of the TaSi2. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360201
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  • 6
    Electronic Resource
    Electronic Resource
    Thickness dependence of the preferred orientation of Mn–Zn ferrite thin films deposited by ion-beam sputtering (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 418-422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness dependence of the preferred orientation of the Cu or Ti added Mn–Zn ferrite thin films deposited on SiO2(1000 A(ring))/Si(100) at 350 °C by ion-beam sputtering was investigated. A mosaic target, consisting of a single-crystal (110) Mn–Zn ferrite with a metal strip on it, was employed as the target. The (hhh) preferred orientation, formed at the initial growth stage, of the Cu added Mn–Zn ferrite film changed to the (h00) preferred orientation with increasing film thickness, while the initially formed (h00) preferred orientation of the Ti added one was enhanced with increasing film thickness. Such different behaviors were discussed in terms of the surface energy and the preferred growth orientation of the ferrite film. The thickness dependence of magnetic properties of the ferrite films was also investigated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360619
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of a large grain sized TiN layer using TiNx, the epitaxial continuity at the Al/TiN interface, and its electromigration endurance in multilayered interconnection (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1719-1724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new technique on the formation of TiN film with large grain size from TiNx is described. The TiNx layer (defined in Sec. II A) was deposited by sputtering in argon and nitrogen. The nitrogen atoms in Ti matrix relaxed the mechanical stress of the deposited film and limited the surface mobility during the deposition process, resulting in a nanocrystalline structure with extremely uniform thickness. After rapid thermal annealing (RTA), the TiNx yielded a bilayer structure of TiN/TiSixOy, in which the TiN showed (111) preferred texture, extremely smooth surface, and large grain size without any columnar structure. In addition, the resistivity of the bilayered TiN was as low as 40 μΩ cm. In the TiN multilayered aluminum structure (i.e., TiN/Al/TiN), epitaxial continuity and the intermetallic compound such as TiAl3 were clearly observed at the aluminum/TiN interface. The multilayered structure showed better endurance against EM in comparison with the same structure using the conventional TiN (also defined in Sec. II A). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360200
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  • 8
    Electronic Resource
    Electronic Resource
    Layer sequence and silicide formation of a Co/(refractory metal) bilayer on (100)Si substrate (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6784-6790 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The solid state reactions of bilayer systems, such as Co/Cr and Co/V, with a silicon substrate have been investigated. The layer sequence could be explained in terms of competitive relations between the diffusion of cobalt atoms toward the substrate and the surface reaction (i.e., silicide formation at the silicon substrate). It was also found that the intermixing between the cobalt and the refractory beneath it is related to the solid solubility between them, and the layer reversal phenomenon critically depends on the silicide formation temperature of the interlayer refractory metal. For example, in the Co/Cr bilayer, where the silicide formation temperature of the chromium is not higher than that of the cobalt, only a partial layer reversal occurs. However, in the Co/V bilayer, where vanadium has a higher silicide formation temperature than cobalt, a complete layer reversal occurs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360775
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of additives on the preferred orientation of Mn–Zn ferrite thin films deposited by ion beam sputtering (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1282-1284 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the effects of additives on the preferred orientation of the Mn–Zn ferrite thin films deposited on SiO2(1000 A(ring))/Si(100) at 350 °C by ion beam sputtering. A mosaic target, consisting of a single crystal (100) Mn–Zn ferrite with a metal strip on it, was employed as the target. The preferred orientation of the ferrite films was (hhh) for the target with or without Fe and Zn additives, and (h00) for Ti addition. In the case of Cu addition, a weak (311) orientation appeared with a strong (hhh) preferred orientation. The origin of the changes in the preferred orientation with different additives was discussed. The easy axis of magnetization, however, lay in the direction parallel to the film plane due to large shape anisotropy, irrespective of the preferred orientation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113270
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  • 10
    Electronic Resource
    Electronic Resource
    Comparison of ultrathin SiO2 films grown by thermal oxidation in an N2O ambient with those in a 33% O2/N2 ambient (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2448-2450 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An N2O ambient allowed the oxidation rate to be substantially low while forming an oxynitride layer at the early stage of oxidation, and also provided nitrogen atoms to the oxide film during further oxidation. Both the formation of an oxynitride layer in the interface of SiO2 and Si substrate and a nitrogen incorporation in the grown oxide film were determined by wet chemical etching and x-ray photoelectron spectroscopy analysis of the grown oxide film. The electrical properties of the N2O oxide films were determined and compared with those of the oxide films grown in a pure or 33% O2/N2 ambient. The superiority in electrical properties appeared to be caused by the formation of the oxynitride layer in the interface of SiO2 and Si substrate. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112703
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