ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Ge2Sb2Te5 (GST) has been widely studied for PRAM as reversible phase change material.GST is expected to reduce RESET (crystalline → amorphous) operation power, which is one ofimportant issues for PRAM technology. In order to investigate the effect of nitrogen doping onelectrical switching characteristics, we fabricated two kinds of PRAM cells with nitrogen-doped(N-doped) and un-doped GST, which were different bottom electrode contact size (0.80~1.00 [removed info]).N-doped GST PRAM cells have higher dynamic resistance with small sized bottom electrode contactand lower RESET voltage (about 1.2 V, 50 ns) than un-doped GST PRAM cells (about 1.6 V, 50 ns).The resistance switching ratio (RRESET to RSET) was about 100. The results of this study indicate thatnitrogen doping into GST film and smaller size of bottom electrode contact reduce RESET power forPRAM operation
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.21.pdf