ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Ti/4H-SiC Schottky barrier diodes were fabricated under 500, 750, 1000 °C thermaltreatment conditions. After the heat treatment at 750 °C, formation of TiC(111) and Ti5Si3(210)phases was confirmed by XRD analysis. Formation of Ti carbide and silicide phase increasedbreakdown voltage VB from 545 V to 830 V. An improvement of breakdown voltage (VB) wasobserved in case of the thermal treatment in nitrogen ambient at 750 °C for 2 min. Ideality factor (n),specific on resistance (Ron), and Schottky barrier height (Φb) were 1.04, 2.7 m[removed info]-cm2, 1.33 eVrespectively
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.105.pdf
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