Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 242-244
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The electronic and structural properties of GaN were investigated for heteroepitaxial layers grown by hydride vapor phase epitaxy. Uniform film nucleation on the sapphire substrates was facilitated by a GaCl pretreatment. The films were all unintentionally doped n type. Variable temperature Hall effect measurements reveal electron concentrations as low as 2×1017 cm−3 and electron mobilities as high as 460 cm2/V s at 300 K. The films exhibit bound exciton photoluminescence lines with a full width at half-maximum (FWHM) of 2.42 meV at 2 K. Transmission electron microscopy studies of the GaN/sapphire interface reveal a ∼200 nm thick, highly defective GaN layer consisting predominantly of stacking faults. The excellent quality of these GaN films is attributed to this "auto-buffer'' layer which enables growth of GaN cells with a dislocation density of ∼3×108 cm−2 after ∼12 μm of film growth. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117937
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