Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 2418-2420
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report an optically pumped multiple-quantum-well laser of InGaN–GaN grown on cubic, (111)-oriented spinel substrates. The laser cavity is formed by cleaving. Atomic force microscopy shows that the cleaved GaN and spinel facets are of similar flatness. The onset of lasing is clearly demonstrated by the saturation of spontaneous emission, abrupt line narrowing, and the highly polarized light output. A lasing threshold power of 140 kW/cm2 is measured in a 400-μm-long cavity at 150 K. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117656
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