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Effect of cyclic process on the {100}-oriented texture growth of diamond film (1996)

Kim, S. H. ; Park, Y. S. ; Han, I. T. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 2184-2186

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The {100}-oriented texture growth of diamond film on (100) Si substrates (1×1 cm2) has been achieved by a three-step procedure (carburization→nucleation→growth) in a microwave- plasma-enhanced chemical vapor deposition (MPECVD) system. The surface morphology is found to be strongly affected by the cyclic process applied during the nucleation step. Furthermore, the density of {100}-oriented grains as well as the coverage area are enhanced by the application of the cyclic process merely during the nucleation step. We also observed the increase in the nucleation density by the cyclic process. This increase may be the origin for the increase in the density of the {100}-oriented grains. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.117159

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