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Epitaxial growth of highly conductive RuO2 thin films on (100) Si (1996)

Jia, Q. X. ; Song, S. G. ; Wu, X. D. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 1069-1071

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Conductive RuO2 thin films have been heteroepitaxially grown by pulsed laser deposition on Si substrates with yttria-stabilized zirconia (YSZ) buffer layers. The RuO2 thin films deposited under optimized processing conditions are a-axis oriented normal to the Si substrate surface with a high degree of in-plane alignment with the major axes of the (100) Si substrate. Cross-sectional transmission electron microscopy analysis on the RuO2/YSZ/Si multilayer shows an atomically sharp interface between the RuO2 and the YSZ. Electrical measurements show that the crystalline RuO2 thin films are metallic over a temperature range from 4.2 to 300 K and are highly conductive with a room-temperature resistivity of 37±2 μΩ cm. The residual resistance ratio (R300 K/R4.2 K) above 5 for our RuO2 thin films is the highest ever reported for such films on Si substrates. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.115715

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