Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
68 (1996), S. 997-999
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Hydrogenated amorphous silicon thin films are doped with erbium by ion implantation. Room-temperature photoluminescence at 1.54 μm, due to an intra-4f transition in Er4+, is observed after thermal annealing at 300–400 °C. Excitation of Er3+ is shown to be mediated by photocarriers. The Er3+ luminescence intensity is quenched by a factor of 15 as the temperature is raised from 10 K to room temperature. Codoping with oxygen (1 at. %) reduces the luminescence quenching to a factor of 7. The quenching is well correlated with a decrease in luminescence lifetime, indicating that nonradiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116124
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